SEOUL, South Korea / RankWire.AI / – Samsung Electronics announced its latest memory and storage plans aimed at supporting artificial intelligence infrastructure during the 2026 OCP Global Summit. The event took place in San Jose, California, from October 12 to 15, where the company shared its strategy encompassing three core technology areas: high-performance memory, Compute Express Link (CXL)-based memory expansion, and next-generation solid-state drives. Additionally, Samsung will collaborate with Advanced Micro Devices on a joint CXL demonstration. This initiative is designed to address the memory bottlenecks that limit larger AI workloads.
Samsung’s approach emphasizes enhancing speed, scalability, and data durability. The first pillar focuses on high-performance memory, with Samsung showcasing customized high-bandwidth memory and the eighth-generation HBM5. The second pillar involves leveraging CXL to expand memory capacity beyond what is traditionally available in each server. The third concentrates on data storage and management, through next-generation enterprise SSDs and advanced storage software. Samsung explains that these three components work synergistically to improve the overall performance of AI systems.
The company linked this strategy to the increasing demand for memory driven by AI inference workloads and larger models. As models grow, they generate more data during inference and require additional memory to store it. Current server architectures often restrict the capacity accessible to each processor. Samsung proposes CXL as a solution to surpass these limitations without overhauling entire systems. The company also emphasized key-value cache optimization, which enables AI models to reuse previously processed data rather than recomputing it.
Samsung and AMD Showcase CXL Memory Expansion
At the summit, Samsung and AMD demonstrated a CXL-based memory expansion solution that allows processors to share memory resources and scale capacity flexibly across AI systems. Samsung confirms that this solution has been validated in real-world system environments. The two companies signed a memorandum of understanding in March 2026, focusing on next-generation AI memory and computing innovations. Additionally, AMD Chief Executive Lisa Su visited South Korea on October 7 to discuss collaboration in memory and foundry technologies.
Samsung also introduced CMM-D, its CXL-compatible DRAM memory module configured for memory pooling. This setup connects multiple CXL memory modules into a shared pool from which different systems can draw as needed. Other exhibits included processing-in-memory technology, which performs certain calculations within memory chips to reduce data transfer. Samsung displayed 2-nanometer gate-all-around wafers and Groq LPU wafers, with Nvidia’s Groq 3 LPX system also featured among the company’s displays.
Early Partner Access to Memory Validation Emphasized
During an executive session, Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, highlighted the importance of expanding memory capacity and bandwidth as AI models increase in size and inference workloads rise. He stated that Samsung is intensifying co-design and technical validation efforts with global partners early in the development process. This approach aims to align memory products closely with customer system needs before reaching the market.
Samsung MAX Lab supports this initiative by enabling customers to test memory and storage solutions under real AI workloads. This allows for validation of technologies such as PIM and next-generation SSDs prior to commercial release. Samsung attended the summit as a Diamond Sponsor of the Open Compute Project event. This participation follows the company’s presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August. Samsung continues to emphasize that memory capacity plays a vital role in enhancing AI infrastructure performance.